Document Type




Format of Original

8 p.

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Source Publication

Journal of Prosthodontics

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Purpose: The addition of anionic charge on denture base resins has been shown to inhibit Candida albicans adhesion and to facilitate adsorption of salivary defense molecules. The aim of this study was to evaluate the physical properties of a modified denture base resin for denture fabrication.

Materials and Methods: Specimens made from heat polymerizing resin Lucitone 199 were used as the control group. The two experimental groups, E-10 and E-20, had 10% and 20%, respectively, of the monomer substituted with an experimental phosphate-containing monomer. Flexural strength and modulus, water sorption, solubility, and color stability tests were conducted to ensure compliance with ADA specification No. 12. Water diffusion coefficient into the resins and stainability were also assessed. ANOVA and Scheffé tests were performed for statistical significance.

Results: There was an overall decline in all properties with the addition of the experimental phosphate compound. The flexural strength and modulus, water sorption and solubility for E-10, as well as the control were, however, within the ADA specifications. The diffusion coefficients were significantly different (p < 0.05) for the three groups. Staining and color specimens showed no significant difference (p > 0.05) among the three groups.

Conclusions: Within the limitations of this study, the physical properties of the phosphate denture base resin at 10% should be suitable for denture fabrication based on the properties assessed.


Accepted version. Journal of Prosthodontics, Vol. 16, No. 6 (November/December 2007): 465-472. DOI. © Wiley 2007. Used with permission.

This is the peer reviewed version of the following article: "Physical Properties of Denture Base Resins Potentially Resistant to Candida Adhesion," which has been published in final form here: DOI. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving

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