Document Type

Article

Language

eng

Format of Original

3 p.

Publication Date

6-2010

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Source Publication

IEEE Transactions on Magnetics

Source ISSN

0018-9464

Original Item ID

doi: 10.1109/TMAG.2010.2041044

Abstract

Artificial defects such as notches and antinotches are often attached to magnetic nanowires to serve as trapping (pinning) sites for domain walls. The magnetic field necessary to release (depin) the trapped domain wall from the notch depends on the type, geometric shape, and dimensions of the defect but is typically quite large. Conversely we show here that for some notches and antinotches there exists a much smaller driving field for which a moving domain wall will travel past the defect without becoming trapped. This dynamic pinning field also depends on the type, geometric shape and defect dimensions. Micromagnetic simulation is used to investigate both the static and dynamic pinning fields and their relation to the topologic structure of the domain wall.

Comments

Published version. IEEE Transactions on Magnetics, Vol. 46, No. 6 (June 2010), DOI. © Institute of Electrical and Electronics Engineers. Used with permission.

Included in

Physics Commons

Share

COinS