Date of Award

Spring 1980

Degree Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Physics

First Advisor

Pedrotti, Frank L.

Second Advisor

Matthys, Donald

Third Advisor

Mendelson, Kenneth S.

Abstract

The electrical activity of low doses of Ge implanted into GaAs amorphous layers has been studied. The amorphous layers were created by the heavy (1E15 & 3E15 ions/cm 2) Ga- or As-ion pre-bombardment into GaAs substrate. Ge-ion implantation was performed at 120 KeV with doses from SE12 to 1E14 ions/cm 2. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures 750, 850 & 950oC. Anneal behavior of sheet resistance, surface carrier concentration, Hall mobility and activation efficiency for various doses of Ge were measured by employing van der Pauw Halleffect/resistivity measurements.

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