Investigation of the Electrical Activity of Germanium Implanted in Gallium Arsenide Amorphous Layers
Date of Award
Spring 1980
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Physics
First Advisor
Pedrotti, Frank L.
Second Advisor
Matthys, Donald
Third Advisor
Mendelson, Kenneth S.
Abstract
The electrical activity of low doses of Ge implanted into GaAs amorphous layers has been studied. The amorphous layers were created by the heavy (1E15 & 3E15 ions/cm 2) Ga- or As-ion pre-bombardment into GaAs substrate. Ge-ion implantation was performed at 120 KeV with doses from SE12 to 1E14 ions/cm 2. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures 750, 850 & 950oC. Anneal behavior of sheet resistance, surface carrier concentration, Hall mobility and activation efficiency for various doses of Ge were measured by employing van der Pauw Halleffect/resistivity measurements.
Recommended Citation
Alim, Mohammad Anwarul, "Investigation of the Electrical Activity of Germanium Implanted in Gallium Arsenide Amorphous Layers" (1980). Master's Theses (1922-2009) Access restricted to Marquette Campus. 2212.
https://epublications.marquette.edu/theses/2212