Date of Award

Spring 1971

Degree Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Physics

Abstract

The Wortman model of a semiconductor junction under anisotropic stress is applied to silicon controlled rectifiers using a two transistor equivalent circuit. Stress dependence is demonstrated by the model. A method of stress induced triggering is described and shown experimentally using a Motorola 2N2323, silicon controlled rectifier.

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