An Analytical Approximation for the Excess Noise Factor of Avalanche Photodiodes with Dead Space

Authors

Majeed M. Hayat, Marquette UniversityFollow
Zikuan Chen, University of Tennessee - KnoxvilleFollow
Mohammad Rezaul Karim, University of Tennessee - KnoxvilleFollow

Document Type

Article

Language

eng

Publication Date

7-1999

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

IEEE Electron Device Letters

Source ISSN

0741-3106

Abstract

Approximate analytical expressions are derived for the mean gain and the excess noise factor of avalanche photodiodes including the effect of dead space. The analysis is based on undertaking a characteristic-equation approach to obtain an approximate analytical solution to the existing system of recurrence equations which characterize the statistics of the random multiplication gain. The analytical expressions for the excess noise factor and the mean gain are shown to be in good agreement with the exact results obtained from numerical solutions of the recurrence equations for values of the dead space reaching up to 20% of the width of the multiplication region.

Comments

Accepted version. IEEE Electron Device Letters, Vol. 20, No. 7 (July 1999): 344-347. DOI. © 1999 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Majeed M. Hayat was affiliated with University of Dayton at the time of publication.

Recommended Citation

Hayat, Majeed M.; Chen, Zikuan; and Karim, Mohammad Rezaul, "An Analytical Approximation for the Excess Noise Factor of Avalanche Photodiodes with Dead Space" (1999). Electrical and Computer Engineering Faculty Research and Publications. 625.
https://epublications.marquette.edu/electric_fac/625