Date of Award
4-1987
Degree Type
Master's Essay - Restricted
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Advisor
Shrinivas G. Joshi
Second Advisor
James A. Benjamin
Third Advisor
Frank L. Pedrotti
Abstract
In recent years dry etching technology of semiconductor materials has received increasing attention because of the fine-line etching requirement of VLSI and very very large scale integrated (VVLSI) circuits. Dry etching provides both selectivity and anisotropy, both of which can be optimized by the proper choice of gas or gas mixtures and of the technique used, i.e. plasma, reactive ion (RI), or sputter (RS) etching.
Recommended Citation
Wu, Chinswei, "Dry Etching Technology in VLSI" (1987). Master's Essays (1922 - ). 2295.
https://epublications.marquette.edu/essays/2295
COinS
Comments
An Essay submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Electrical Engineering and Computer Science. Milwaukee, Wisconsin