Shallow Acceptor Levels in Silicon

Author

David R. Schultz, Marquette University

Date of Award

Summer 1968

Document Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Physics

First Advisor

Mendelson, Kenneth S.

Second Advisor

Greene, J. B.

Third Advisor

Karioris, Frank

Abstract

This thesis presents a calculation of acceptor state energies and wave functions produced by the introduction of Group III impurities into a pure silicon crystal. The purpose of this work is to obtain a better value for the ground state energy and to calculate as many excited state energies as possible.

Recommended Citation

Schultz, David R., "Shallow Acceptor Levels in Silicon" (1968). Master's Theses (1922-2009) Access restricted to Marquette Campus. 2339.
https://epublications.marquette.edu/theses/2339