Date of Award

Spring 1968

Degree Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Electrical Engineering

First Advisor

Ishii, T. K.

Second Advisor

Jaskolski, S. V.

Third Advisor

Szews, A. P.

Abstract

Bulk effect phenomenon in semiconductor devices has been discovered in recent years. Although various researchers have studied this effect in considerable detail, very little attention has been devoted to the practical applications of this phenomenon. In this thesis one of the possible applications of bulk effect semiconductor devices was investigated. A microwave transmitter, which utilizes a bulk effect (Gunn) diode to furnish the carrier frequency of the transmitter, was constructed and evaluated. Although this thesis was primarily concerned with experimental investigation, the experimental results were verified or explained theoretically whenever it was possible. Some of the results of this investigation were compared with those of a similar transmitter which utilized a reflex klystron in place of the Gunn diode.

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