Date of Award
Spring 1968
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical Engineering
First Advisor
Ishii, T. K.
Second Advisor
Jaskolski, S. V.
Third Advisor
Szews, A. P.
Abstract
Bulk effect phenomenon in semiconductor devices has been discovered in recent years. Although various researchers have studied this effect in considerable detail, very little attention has been devoted to the practical applications of this phenomenon. In this thesis one of the possible applications of bulk effect semiconductor devices was investigated. A microwave transmitter, which utilizes a bulk effect (Gunn) diode to furnish the carrier frequency of the transmitter, was constructed and evaluated. Although this thesis was primarily concerned with experimental investigation, the experimental results were verified or explained theoretically whenever it was possible. Some of the results of this investigation were compared with those of a similar transmitter which utilized a reflex klystron in place of the Gunn diode.
Recommended Citation
Al-Moufti, Mohammed Nasieraldeen, "Construction and Evaluation of Bulk Effect Diode Transmitter" (1968). Master's Theses (1922-2009) Access restricted to Marquette Campus. 3860.
https://epublications.marquette.edu/theses/3860