Date of Award

Summer 1981

Degree Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Physics

First Advisor

Pedrotti, Frank L.

Second Advisor

Feldott, Jeanette

Third Advisor

Deshotels, Warren

Abstract

Gallium arsenide (GaAs) samples were implanted with sulphur and gallium at ion energies of 63 keV and 120 keV respectively in doses ranging from 5x1012 ions/cm2 to 1x1015 ions/cm2• Gallium was introduced in addition to sulphur in order to determine whether this dual implantation could enhance the electrical activity in comparison to single sulphur implant. Two different kinds of GaAs samples were used, one was semi-insulating chromium-doped GaAs and the other was epitaxial GaAs sample. Ion implantation was carried out at the Avionics Laboratory, Wright Patterson Air Force Base, Dayton, Ohio, at room temperature and silicon nitride (Si3N4) encapsulant was used for thermal annealing at 850°C and 9500C for 30 minutes. Electrical measurements were carried out in the Solid State Laboratory, Physics Department, Marquette University by using the Van der Pauw method. The sheet carrier concentration, sheet resistance, Hall sheet coefficient, Hall mobility and activation efficiency were determined for each sample. Electrical characterization of these samples determined that the dual implantation of Ga+S into GaAs did not enhance the activity compared with single S-impalnted GaAs.

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