Investigation of Hydrogenated Amorphous Silicon Films and Schottky Barrier Junctions Fabricated by the Glow Discharge Technique
Date of Award
Dissertation - Restricted
Doctor of Philosophy (PhD)
Electrical and Computer Engineering
Jaskolski, S. V.
Joshi, S. G.
In the field of amorphous silicon, much effort is currently devoted to understanding the optimum deposition conditions for the fabrication of hydrogenated amorphous silicon (a-Si:H), comparable in characteristics to high quality semiconductor material. The goal of this research was to test experimentally, how the parameters of the d.c. glow discharge decomposiiton of silane influence the electronic parameters of the resultant a-Si:H films and the metal a-Si:H junction. The films deposited in a three electrode system, where the substrate was held on an electrode biased positively with respect to the cathode, were of special interest. A premise for employing this configuration was an ion bombardment and sputtering of the substrates when the film deposition took place on the cathode. Comparison and discussion of the electrical parameters of the films deposited in the three electrode system and in a two electrode system are presented. Also, measured parameters of the photovoltaic Schottky barrier cells fabricated on the a-Si:H films are discussed. These experimental results are compared with theoretical data calculated employing a computer simulation of a metal-amorphous silicon photocell.