A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters
IEEE Transactions on Industrial Electronics
Abstract: Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.
He, Jiangbiao; Katebi, Ramin; and Weise, Nathan, "A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters" (2017). Electrical and Computer Engineering Faculty Research and Publications. 294.
Accepted version. IEEE Transactions on Industrial Electronics, Vol. 64, No. 10 (October 2017): 8344-8352. DOI. © 2017 IEEE. Used with permission.