Document Type

Article

Language

eng

Publication Date

6-6-2016

Publisher

AIP Publishing

Source Publication

Applied Physics Letters

Source ISSN

0003-6951

Abstract

We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 degrees C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material’s resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.

Comments

Published version. Applied Physics Letters, Vol. 108 (2016): 231901. DOI. © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

R.A. Coutu, Jr. was affiliated with the Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson AFB, Ohio 45433, USA at the time of publication.

Creative Commons License

Creative Commons Attribution 4.0 License
This work is licensed under a Creative Commons Attribution 4.0 License.

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