Document Type

Article

Language

eng

Publication Date

7-2011

Publisher

Society of Photo-Optical Instrumentation Engineers (SPIE)

Source Publication

Journal of Micro/Nanolithography, MEMS and MOEMS

Source ISSN

1932-5150

Abstract

This paper discusses a novel fabrication process that uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. MicroChem's negative photoresist Nano™ SU-8 and Clariant's image reversal photoresist AZ 5214E are utilized, along with a barrier layer, to effectively convert a positive photomask into a negative image. This technique utilizes standard photolithography chemicals, equipment, and processes, and opens the door for creating complementary MEMS structures without added fabrication delay and cost. Furthermore, the SU-8 masking layer is robust enough to withstand aggressive etch chemistries needed for fabrication research and development, bulk micromachining high-aspect ratio MEMS structures in silicon substrates, etc. This processing technique was successfully demonstrated by translating a positive photomask to an SU-8 layer that was then utilized as an etching mask for a series of trenches that were micromachined into a silicon substrate. In addition, whereas the SU-8 mask would normally be left in place after processing, a technique utilizing Rohm and Haas Microposit™ S1818 as a release layer has been developed so that the SU-8 masking material can be removed post-etching.

Comments

Published version. Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 10, No. 3 (1 July 2011), 033016. DOI. © 2011 SPIE. Used with permission.

Ronald A. Coutu, Jr. was affiliated with Air Force Institute of Technology, Wright-Patterson AFB at the time of publication.

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