Design and Analysis of Novel Ge-GeTe PN Junction for Photovoltaics

Authors

Andrew M. Jones, Air Force Institute of Technology
Ronald A. Coutu Jr., Marquette UniversityFollow
Robert A. Lake, Air Force Institute of TechnologyFollow

Document Type

Article

Language

eng

Publication Date

7-25-2016

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

2016 IEEE National Aerospace and Electronics Conference (NAECON) and Ohio Innovation Summit (OIS)

Source ISSN

9781509034413

Abstract

The continuing rise in demand for energy places a similarly increasing demand to improve power production methods and efficiency. In regards to solar power generation, one major limiting factor with existing photovoltaic (PV) systems is the management of heat produced and photon interactions with the PV device. Typical devices operate within the 300-1000 nm range of the solar spectrum, greatly limiting the range of photons used for power generation. Furthermore, since infrared light (

Comments

Published version. 2016 IEEE National Aerospace and Electronics Conference (NAECON) and Ohio Innovation Summit (OIS), (July 25-29, 2016). DOI. U.S. Government work not protected by U.S. copyright.

Ronald A. Coutu, Jr. was affiliated with the Air Force Institute of Technology at the time of publication.

Recommended Citation

Jones, Andrew M.; Coutu, Ronald A. Jr.; and Lake, Robert A., "Design and Analysis of Novel Ge-GeTe PN Junction for Photovoltaics" (2016). Electrical and Computer Engineering Faculty Research and Publications. 422.
https://epublications.marquette.edu/electric_fac/422