Document Type

Article

Language

eng

Publication Date

1-1-2014

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

IEEE Photonics Technology Letters

Source ISSN

1041-1135

Abstract

We report an extension of the analytical dead space multiplication theory that provides the means to theoretically determine the spatial distribution of electron and hole impact-ionization events in an arbitrarily specified heterojunction multiplication region. The model can be used to understand the role of the dead space in regularizing the locations of impact ionization. It can also be utilized to analyze, design, and optimize new generations of ultra-low noise, multistaged gain avalanche photodiodes based upon judiciously energizing and relaxing carriers to enhance electron impact ionization and suppress hole impact ionization.

Comments

Accepted version. IEEE Photonics Technology Letters, Vol. 26, No. 1 (January 1, 2014): 25-28. DOI. This article is © Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Majeed M. Hayat was affiliated with University of New Mexico, Albuquerque at the time of publicaton.

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