Statistical Properties of the Impulse Response Function of Double-carrier Multiplication Avalanche Photodiodes Including the Effect of Dead Space
Document Type
Article
Publication Date
10-1992
Publisher
Institute of Electrical and Electronics Engineers
Source Publication
Journal of Lightwave Technology
Source ISSN
0733-8724
Abstract
The statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes (APDs) are determined, including the effect of dead space, i.e., the minimum distance that a newly generated carrier must travel in order to acquire sufficient energy to become capable of causing an impact ionization. Recurrence equations are derived for the first and second moments and the probability distribution function of a set of random variables that are related, in a deterministic way, to the random impulse response function of the APD. The equations are solved numerically to produce the mean impulse response, the standard deviation, and the signal-to-noise ratio (SNR), all as functions of time.
Recommended Citation
Hayat, Majeed M. and Saleh, B.E.A, "Statistical Properties of the Impulse Response Function of Double-carrier Multiplication Avalanche Photodiodes Including the Effect of Dead Space" (1992). Electrical and Computer Engineering Faculty Research and Publications. 715.
https://epublications.marquette.edu/electric_fac/715
Comments
Journal of Lightwave Technology, Vol. 10, No. 10 (October 1992): 1415-1425. DOI
Majeed M. Hayat was affiliated with University of Wisconsin, Madison at the time of publication.