Date of Award

Fall 1985

Degree Type

Thesis - Restricted

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Advisor

Ishii, T. K.

Second Advisor

Seitz, Martin A.

Third Advisor

Jeutter, Dean C.

Abstract

The interaction of optical and millimeter waves in relation to millimeter wave reflected power of a photoconductive device is investigated. When a photoconductive device is irradiated by millimeter waves (69.6 GHz.) and illuminated with laser light (632.8 nm.), the millimeter wave reflected power is affected. A change in the reflection level up to 0.3 dB was noted . No frequency shift was observed when the illumination of the device was changed. These observations are theoretically analyzed. It is found that the change in the conductance of the device is too small to produce an observable change in frequency but large enough to produce a change in the reflected power level. No distinction could be made between horizontally and vertically polarized light with respect to causing a change in the millimeter wave reflected power level. Also at millimeter wave frequencies the millimeter wave beam behaves in a manner between an optical beam and a microwave beam regarding the directional properties of the reflections . A combination of ray optic and radar cross-section analysis is performed in order to obtain a better analysis of the millimeter wave beam's behavior.

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