Date of Award

Fall 1992

Document Type

Thesis - Restricted

Degree Name

Master of Science (MS)




In the last decade, III-V semiconductor compounds doped with rare-earth ions have been intensively investigated for their possible applications in opto-electronic devices. Many papers have reported the results of research on their photoluminescence spectra and optical properties. There is still very little known, however, concerning their electrical activity. Only a few articles have been concerned with this aspect. Study of the electrical properties, when supported by photoluminescence research, is important in reaching an understanding of the mechanism for efficient activation of the luminescence observed. The present work is a study of the electrical properties of gallium arsenide (GaAs) and indium phosphide (InP) with ion implanted rare-earth dopants. We have used rare-earth elements, Ytterbium (Yb), Erbium (Er) and Thulium (Tm) as dopants. The Van der Pauw method was used to measure electrical properties: carrier type, Hall mobility, carrier concentration and sheet resistivity. We have investigated two groups of samples, rare-earth implanted GaAs and lnP, to study their electrical activity. The results reported here represent an initial or feasibility study of a small number of samples, undertaken to determine whether a more systematic ( and costly) study is justified.



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