Document Type
Article
Language
eng
Publication Date
2017
Publisher
Nature Publishing Group
Source Publication
Scientific Reports
Source ISSN
2045-2322
Abstract
Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T−4) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO2/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation.
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
Davaji, Benyamin; Cho, Hak Dong; Malakoutian, Mohamadali; Lee, Jong-Kwon; Panin, Gennady; Kang, Tae Wong; and Lee, Chung-Hoon, "A Patterned Single Layer Graphene Resistance Temperature Sensor" (2017). Electrical and Computer Engineering Faculty Research and Publications. 280.
https://epublications.marquette.edu/electric_fac/280
Comments
Published version. Scientific Reports (2017). DOI. © 2017 Nature Publishing Group (Macmillan Publishers Limited). Used with permission.