Document Type
Article
Language
eng
Publication Date
2012
Publisher
Hindawi Publishing Corporation
Source Publication
Active and Passive Electronic Components
Source ISSN
0882-7516
Abstract
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.
Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.
Recommended Citation
Christiansen, Bradley D.; Heller, Eric R.; Coutu, Ronald A. Jr.; Vetury, Ramakrishna; and Shealy, Jeffrey B., "A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current" (2012). Electrical and Computer Engineering Faculty Research and Publications. 328.
https://epublications.marquette.edu/electric_fac/328
ADA accessible version
Comments
Published version. Active and Passive Electronic Components, Vol. 2012, Article ID 493239. DOI. © 2012 Bradley D. Christiansen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Ronald A. Coutu Jr. was affiliated with the Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH.