Document Type
Article
Language
eng
Publication Date
2010
Publisher
OSA Publishing
Source Publication
Journal of the Optical Society of America B
Source ISSN
0740-3224
Abstract
Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 μm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 μm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.
Recommended Citation
Wagner, T. J.; Bohn, M. A.; Coutu, Ronald A. Jr.; Gonzalez, L. P.; Murray, J. M.; Schepler, K. L.; and Guha, S., "Measurement and Modeling of Infrared Nonlinear Absorption Coefficients and Laser-induced Damage Thresholds in Ge and GaSb" (2010). Electrical and Computer Engineering Faculty Research and Publications. 346.
https://epublications.marquette.edu/electric_fac/346
ADA accessible version
Comments
Published version. Journal of the Optical Society of America B, Vol. 27, No. 10 (2010): 2122-2131. DOI. © 2010 U.S. Government.
Ronald A. Coutu, Jr. was affiliated with Air Force Institute of Technology, Wright Patterson Air Force Base, Ohio at the time of publication.