Interrelationship Between Hardness and Resistivity of Metal Alloy Films as Contact Materials in MEMS Switches

Document Type

Conference Proceeding

Language

eng

Publication Date

2006

Publisher

American Society of Mechanical Engineers

Source Publication

STLE/ASME 2006 International Joint Tribology Conference Part B: Magnetic Storage Tribology; Manufacturing/Metalworking Tribology; Nanotribology; Engineered Surfaces; Biotribology; Emerging Technologies; Special Symposia on Contact Mechanics; Special Symposium on Nanotribology San Antonio, Texas, USA, October 23–25, 2006

Source ISSN

0791842592

Abstract

This study presents a basic step towards the selection methodology of electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This involves the interrelationship between the two important parameters, resistivity and hardness, since they provide the guidelines and assessment of the contact resistance, wear, deformation, and adhesion characteristics of MEMS switches. For this purpose, thin film alloys of three noble metals; platinum (Pt), rhodium (Rh) and ruthenium (Ru) with gold (Au) were investigated. The interrelationship between resistivity and hardness was established for three amounts of alloying of these metals with gold. Thin films of gold (Au), platinum (Pt), ruthenium (Rh), and rhodium (Ru) were also characterized to obtain their baseline data for comparison. All films were deposited on silicon substrates. When Ru, Rh, and Pt are alloyed with Au, their hardness generally decreases but resistivity increases. This decrease or increase was, in general, dependent upon the amount of alloying.

Comments

STLE/ASME 2006 International Joint Tribology Conference, Part B: Magnetic Storage Tribology; Manufacturing/Metalworking Tribology; Nanotribology; Engineered Surfaces; Biotribology; Emerging Technologies; Special Symposia on Contact, Mechanics; Special Symposium on Nanotribology, San Antonio, Texas, USA, (October 23–25, 2006): 1377-1378. Paper No. IJTC2006-12268. DOI.

Ronald A. Coutu, Jr. was affiliated with Air Force Institute of Technology at the time of publication.

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