Document Type
Conference Proceeding
Language
eng
Publication Date
2009
Publisher
Society of Photo-Optical Instrumentation Engineers (SPIE)
Source Publication
Proceedings of SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II
Abstract
We investigated the effects of hydrogen pretreatment on nickel catalyst of different thicknesses and deposition methods on a silicon substrate and how it will affect the growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition (MPECVD). Nickel catalyst of 10, 50, 100, 200, 350 and 500 Å thickness was treated with hydrogen flowing at 135 standard cubic centimeter per minute (sccm), substrate temperature of 400 °C, microwave power of 400 W, and pressure of 20 torr. The treated catalyst granule size and density was determined optically through scanning electron microscope (SEM) images and atomic force microscope (AFM) measurements. We found that sputtered catalyst needs a longer pretreatment than evaporated catalyst. As expected, the pretreatment time must be increased as the catalyst thickness increases to get granule sizes and densities favorable for carbon nanotube (CNT) growth. CNT growth took place with a hydrogen flow of 120 sccm, methane flow of 15 sccm, substrate temperature of 650 °C, microwave power of 1000 W and a pressure of 20 torr. We determined the catalyst can be over treated causing catalyst conglomeration that result in poor CNT growth.
Recommended Citation
Kossler, Mauricio; Crossley, Benjamin L.; Coutu, Ronald A. Jr.; Starman, Lavern A.; and Collins, Peter J., "Study on the Effects of Hydrogen Pretreatment on Nickel Catalyst Used for Multi Walled Carbon Nanotube Growth" (2009). Electrical and Computer Engineering Faculty Research and Publications. 370.
https://epublications.marquette.edu/electric_fac/370
Comments
Published version. "Study on the effects of hydrogen pretreatment on nickel catalyst used for multi walled carbon nanotube growth," Proceedings of SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II, 739904 (18 August 2009), DOI. © (2009) Society of Photo-Optical Instrumentation Engineers (SPIE). Used with permission.
Ronald A. Coutu was affiliated with Air Force Institute of Technology at the time of publication.