Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors

Authors

Bradley D. Christiansen, United States Air Force Institute of TechnologyFollow
Ronald A. Coutu Jr., Marquette UniversityFollow
Eric R. Heller, Air Force Research Laboratory, Materials and Manufacturing DirectorateFollow
Brian S. Poling, Air Force Research Laboratory, Sensors Directorate
Glen D. Via, Air Force Research Laboratory, Sensors Directorate
Ramakrishna Vetury, RF Micro Devices, Inc.Follow
Jeffrey B. Shealy, RF Micro Devices, IncFollow

Document Type

Article

Language

eng

Publication Date

4-10-2011

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

2011 International Reliability Physics Symposium

Source ISSN

1938-1891

Abstract

We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltage-tested devices did not degrade significantly as suggested by some papers in the literature. The same papers in the literature also suggest that high voltages cause cracks and pits. However, the high-voltage-tested devices in this study do not exhibit cracks or pits in TEM images, while the high-power-tested devices exhibit pits.

Comments

Accepted version. 2011 International Reliability Physics Symposium (April 10-14, 2011). DOI. © 2011 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Ronald A. Coutu, Jr. was affiliated with the Air Force Institute of Technology, Wright-Patterson Air Force Base at the time of publication

Recommended Citation

Christiansen, Bradley D.; Coutu, Ronald A. Jr.; Heller, Eric R.; Poling, Brian S.; Via, Glen D.; Vetury, Ramakrishna; and Shealy, Jeffrey B., "Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors" (2011). Electrical and Computer Engineering Faculty Research and Publications. 416.
https://epublications.marquette.edu/electric_fac/416