Institute of Electrical and Electronic Engineers (IEEE)
2011 International Reliability Physics Symposium
We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltage-tested devices did not degrade significantly as suggested by some papers in the literature. The same papers in the literature also suggest that high voltages cause cracks and pits. However, the high-voltage-tested devices in this study do not exhibit cracks or pits in TEM images, while the high-power-tested devices exhibit pits.
Christiansen, Bradley D.; Coutu, Ronald A. Jr.; Heller, Eric R.; Poling, Brian S.; Via, Glen D.; Vetury, Ramakrishna; and Shealy, Jeffrey B., "Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors" (2011). Electrical and Computer Engineering Faculty Research and Publications. 416.
ADA accessible version
Accepted version. 2011 International Reliability Physics Symposium (April 10-14, 2011). DOI. © 2011 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Ronald A. Coutu, Jr. was affiliated with the Air Force Institute of Technology, Wright-Patterson Air Force Base at the time of publication