Midwave Infrared Quantum Dot Avalanche Photodiode

Authors

David A. Ramirez, University of New Mexico
Jiayi Shao, University of New Mexico
Majeed M. Hayat, Marquette UniversityFollow
Sanjay Krishna, University of New Mexico - Albuquerque

Document Type

Article

Language

eng

Publication Date

12-1-2010

Publisher

American Institute of Physics

Source Publication

Applied Physics Letters

Source ISSN

0003-6951

Abstract

We report the first demonstration of a GaAs based avalanche photodiode (APD) operating in the midwave infrared region . In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector is coupled with an APD through a tunnel barrier. Using this approach, we have increased the photocurrent and reached a conversion efficiency of 12%, which is one of the highest reported conversion efficiencies for any quantum dot detector.

Comments

Published version. Applied Physics Letters, Vol. 97, No.22 (December 1, 2010). DOI. This article is © American Institute of Physics. Used with permission.

Majeed M. Hayat was affiliated with University of New Mexico at the time of publication.

Recommended Citation

Ramirez, David A.; Shao, Jiayi; Hayat, Majeed M.; and Krishna, Sanjay, "Midwave Infrared Quantum Dot Avalanche Photodiode" (2010). Electrical and Computer Engineering Faculty Research and Publications. 523.
https://epublications.marquette.edu/electric_fac/523