Document Type
Article
Language
eng
Publication Date
2003
Publisher
Institute of Electrical and Electronic Engineers (IEEE)
Source Publication
IEEE Journal of Quantum Electronics
Source ISSN
0018-9197
Abstract
The recurrence theory for the breakdown probability in avalanche photodiodes (APDs) is generalized to heterostructure APDs that may have multiple multiplication layers. The generalization addresses layer-boundary effects such as the initial energy of injected carriers as well as the layer-dependent profile of the dead space in the multiplication region. Reducing the width of the multiplication layer serves to both downshift and sharpen the breakdown probability curve as a function of the applied reverse-bias voltage. In structures where the injected carriers have an initial energy that is comparable to the ionization threshold energy, the transition from linear mode to Geiger-mode is more abrupt than in structures in which such initial energy is negligible. The theory is applied to two recently fabricated Al 0.6 Ga 0.4 As-GaAs heterostructure APDs and to other homostructure thin GaAs APDs and the predictions of the breakdown-voltage thresholds are verified.
Recommended Citation
Hayat, Majeed M.; Sako ̆glu, Ünal; Kwon, Oh-Hyun; Wang, Shuling; Campbell, Joe C.; Saleh, Bahaa E.A.; and Teich, Malvin Carl, "Breakdown probabilities for thin heterostructure avalanche photodiodes" (2003). Electrical and Computer Engineering Faculty Research and Publications. 528.
https://epublications.marquette.edu/electric_fac/528
Comments
Accepted version. IEEE Journal of Quantum Electronics, Vol. 39, No. 1 (2003): 179-185. DOI. © 2003 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Majeed M. Hayat was affiliated the the University of New Mexico at the time of publication.