Document Type
Article
Language
eng
Publication Date
6-2015
Publisher
Institute of Electrical and Electronic Engineers (IEEE)
Source Publication
IEEE Transactions on Electron Devices
Source ISSN
0018-9383
Abstract
The experimentally determined impact ionization coefficients, , include intrinsically the presence of a dead-space, where carriers cannot impact ionize as they do not have sufficient energy. These, therefore, cannot be used by nonlocal ionization models, which require the enabled ionization coefficients, which describe the ionization probability after the dead-space. A relatively simple relationship is shown to exist between α'(β') and , which requires only the knowledge of the carrier threshold energies. This allows conventionally limited to the local model framework, to be used to give a very good prediction of the avalanche multiplication and excess noise for a wide range of device widths down to 0.05 μm, where the dead-space effect is significant. Parameterized values of and the carrier threshold energies are listed for a range of commonly used III-V semiconductors lattice matched to GaAs and InP substrates, as well as Si and SiC.
Recommended Citation
Cheong, Jeng Shiuh; Hayat, Majeed M.; Zhou, Xinxin; and David, John P.R., "Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients" (2015). Electrical and Computer Engineering Faculty Research and Publications. 561.
https://epublications.marquette.edu/electric_fac/561
ADA Accessible Version
Comments
Accepted version. IEEE Transactions on Electron Devices, Vol. 62, No. 6 (June 2015): 1946-1952. DOI. This article is © Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Majeed M. Hayat was affiliated with University of New Mexico, Albuquerque at the time of publication.