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Institute of Electrical and Electronic Engineers (IEEE)

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IEEE Transactions on Electron Devices

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The experimentally determined impact ionization coefficients, , include intrinsically the presence of a dead-space, where carriers cannot impact ionize as they do not have sufficient energy. These, therefore, cannot be used by nonlocal ionization models, which require the enabled ionization coefficients, which describe the ionization probability after the dead-space. A relatively simple relationship is shown to exist between α'(β') and , which requires only the knowledge of the carrier threshold energies. This allows conventionally limited to the local model framework, to be used to give a very good prediction of the avalanche multiplication and excess noise for a wide range of device widths down to 0.05 μm, where the dead-space effect is significant. Parameterized values of and the carrier threshold energies are listed for a range of commonly used III-V semiconductors lattice matched to GaAs and InP substrates, as well as Si and SiC.


Accepted version. IEEE Transactions on Electron Devices, Vol. 62, No. 6 (June 2015): 1946-1952. DOI. This article is © Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Majeed M. Hayat was affiliated with University of New Mexico, Albuquerque at the time of publication.

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