Breakdown Voltage in Thin III-V Avalanche Photodiodes

Authors

Mohammad A. SalehFollow

Document Type

Article

Language

eng

Publication Date

2001

Publisher

American Institute of Physics

Source Publication

Applied Physics Letters

Source ISSN

0003-6951

Abstract

1. The dead-space multiplication theory of Hayat et al. [Journal of Lightwave Technology 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In_0:52Al_0:48As, and Al_0:2Ga_0:8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.

Comments

Published version. Applied Physics Letters, Vol. 79, No. 24 (2001) : 4037-4039. DOI. © American In2001stitute of Physics. Used with permission.

Majeed M. Hayat was affiliated with University of New Mexico, Albuquerque at the time of publication.

Recommended Citation

Saleh, Mohammad A., "Breakdown Voltage in Thin III-V Avalanche Photodiodes" (2001). Electrical and Computer Engineering Faculty Research and Publications. 605.
https://epublications.marquette.edu/electric_fac/605