American Institute of Physics
Applied Physics Letters
- The dead-space multiplication theory of Hayat et al. [Journal of Lightwave Technology 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0:52Al0:48As, and Al0:2Ga0:8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.
Saleh, Mohammad A., "Breakdown Voltage in Thin III-V Avalanche Photodiodes" (2001). Electrical and Computer Engineering Faculty Research and Publications. 605.
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