Document Type
Article
Language
eng
Publication Date
6-2000
Publisher
Institute of Electrical and Electronic Engineers (IEEE)
Source Publication
IEEE Transactions on Electron Drives
Source ISSN
0018-9383
Abstract
A new approach for characterizing the avalanche-buildup-time-limited bandwidth of avalanche photodiodes (APDs) is introduced which relies on the direct knowledge of the statistics of the random response time. The random response time is the actual duration of the APD’s finite buildup-limited random impulse response function. A theory is developed characterizing the probability distribution function (PDF) of the random response time. Recurrence equations are derived and numerically solved to yield the PDF of the random response time. The PDF is then used to compute the mean and the standard deviation of the bandwidth. The dependence of the mean and the standard deviation of the bandwidth on the APD mean gain and the ionization coefficient ratio is investigated. Exact asymptotics of the tail of the PDF of the response time are also developed to aid the computation efficiency. The technique can be readily applied to multiplication models which incorporate dead space and can be extended to cases for which the carrier ionization coefficient is position dependent.
Recommended Citation
Hayat, Majeed M. and Dong, Guoquan, "A New Approach for Computing the Bandwidth Statistics of Avalanche Photodiodes" (2000). Electrical and Computer Engineering Faculty Research and Publications. 620.
https://epublications.marquette.edu/electric_fac/620
ADA Accessible Version
Comments
Accepted version. IEEE Transactions on Electron Drives, Vol. 47, No. 6 (June 2000) : 1273-1279. DOI. © 2000 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Majeed Hayat was affiliated with University of Dayton at the time of publication.