Detection Efficiencies and Generalized Breakdown Probabilities for Nanosecond-Gated Near Infrared Single-Photon Avalanche Photodiodes

Authors

David A. Ramirez, University of ConcepciónFollow
Majeed M. Hayat, Marquette UniversityFollow
Gauri Karve, University of Texas - Austin
Joe C. Campbell, University of TexasFollow
Sergio N. Torres, University of Concepcion
Bahaa E.A. Saleh, Boston UniversityFollow
Malvin Carl Teich, Boston UniversityFollow

Document Type

Article

Language

eng

Publication Date

2-2006

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

IEEE Journal of Quantum Electronics

Source ISSN

0018-9197

Abstract

A rigorous model is developed for determining single-photon quantum efficiency (SPQE) of single-photon avalanche photodiodes (SPADs) with simple or heterojunction multiplication regions. The analysis assumes nanosecond gated-mode operation of the SPADs and that band-to-band tunneling of carriers is the dominant source of dark current in the multiplication region. The model is then utilized to optimize the SPQE as a function of the applied voltage, for a given operating temperature and multiplication-region structure and material. The model can be applied to SPADs with In/sub 0.52/Al/sub 0.48/As or InP multiplication regions as well as In/sub 0.52/Al/sub 0.48/As--InP heterojunction multiplication regions for wavelengths of 1.3 and 1.55 /spl mu/m. The predictions show that the SPQE generally decreases with decreasing the multiplication-region thickness. Moreover, an InP multiplication region requires a lower breakdown electric field (and, hence, offers a higher SPQE) than that required by an In/sub 0.52/Al/sub 0.48/As layer of the same width. The model also shows that the fractional width of the In/sub 0.52/Al/sub 0.48/As layer in an In/sub 0.52/Al/sub 0.48/As--InP heterojunction multiplication region can be optimized to attain a maximum SPQE that is greater than that offered by an InP multiplication region. This effect becomes more pronounced in thin multiplication regions as a result of the increased significance of dead space.

Comments

Accepted version. IEEE Journal of Quantum Electronics, Vol. 42, No. 2 (February 2006): 137-145. DOI. © 2006 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Majeed M. Hayat was affiliated with University of New Mexico, Albuquerque at the time of publication.

Recommended Citation

Ramirez, David A.; Hayat, Majeed M.; Karve, Gauri; Campbell, Joe C.; Torres, Sergio N.; Saleh, Bahaa E.A.; and Teich, Malvin Carl, "Detection Efficiencies and Generalized Breakdown Probabilities for Nanosecond-Gated Near Infrared Single-Photon Avalanche Photodiodes" (2006). Electrical and Computer Engineering Faculty Research and Publications. 626.
https://epublications.marquette.edu/electric_fac/626