A Study of Temperature Dependent Electrical Properties of Ion-Implanted Gallium Arsenide

Author

Shanmugam Sundaram, Marquette University

Date of Award

5-1983

Degree Type

Master's Essay

Degree Name

Master of Science (MS)

Department

Chemistry

First Advisor

Frank Louis Pedrotti

Second Advisor

Thadeus J. Burch

Third Advisor

Warren J. Deshotels

Abstract

Two samples, GaAs:Mg (p-type) and GaAs:Si (n-type), ion-implanted to the same does of 5x10¹² ions/cm². were investigated to study their temperature dependent electrical properties. The resistivities and Hall constant were determined directly by Van der Pauw Technique. Sheet carrier concentration and carries mobility were then calculated. The Silicon sample, in which the properties were relatively temperature independent, was found to be in the metallic conduction range. Hence the magnesium sample was chosen for further temperature dependency investigation.

Comments

A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science. Marquette University, Milwaukee, Wisconsin.

Recommended Citation

Sundaram, Shanmugam, "A Study of Temperature Dependent Electrical Properties of Ion-Implanted Gallium Arsenide" (1983). Master's Essays (1922 - ). 2998.
https://epublications.marquette.edu/essays/2998