Document Type
Conference Proceeding
Language
eng
Format of Original
4 p.
Publication Date
9-2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Source Publication
Proceedings of 2010 ICEAA Offshore/IEEE Xplore
Source ISSN
978-1-4244-7368-7
Original Item ID
DOI: 10.1109/ICEAA.2010.5653609
Abstract
Controlled motion of 180o and 360o domain walls along planar nanowires is presented. Standard Landau – Lifshitz micromagnetic modeling has been used to simulate the response of the domain walls to the application of an external magnetic field. A 180o wall is quickly and easily moved with the application of an applied. field along the axis of the wire but a 360odomain wall is stationary in the same case. An oscillatory applied field can be used to continually move the wall along the wires axis. The speed at which the 360o domain wall is found to be several times slower than a similar 180o domain wall and is limited by interaction between the magnetization of the domain wall and the external field.
Recommended Citation
Kunz, Andrew; Reiff, Sarah C.; Priem, Jonathan D.; and Rentsch, Eric W., "Controlling Individual Domain Walls in Ferromagnetic Nanowires for Memory and Sensor Applications" (2010). Physics Faculty Research and Publications. 116.
https://epublications.marquette.edu/physics_fac/116
Comments
Accepted version. Published as a part of the conference 2010 ICEAA Offshore/IEEE Xplore, 2010: 248-251. DOI.
© 2010 IEEE. Reprinted, with permission, from Andrew Kunz, Sarah C. Reiff, Jonathan d. Priem, Eric W. Rentschle, Controlling individual domain walls in ferromagnetic nanowires for memory and sensor applications, Proceedings of 2010 ICEAA Offshore/IEEE Xplore, September 2010.
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