Date of Award
Spring 1977
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Physics
First Advisor
Deshotels, Warren J.
Second Advisor
Matthys, Donald
Third Advisor
Tani, Smio
Abstract
The Hall coefficient and electrical resistivity were measured for an oriented cadmium sulfide crystal with C-axis parallel to the magnetic field. Values were taken in the temperature range from I5 degee K to 325K. From these data, charge carrier concentration and Hall mobility were calculated throughout the temperature range. Magnetic field dependence of Hall coefficient and resistivity were also measured. The material displayed what appeared to be ohmic magnetoresistivity in the quantum oscillatory region above 70 kilogauss. In addition, the optical absorption edge was determined and the energy gap inferred.
Recommended Citation
James, Christopher D., "Galvanomagnetic Effects in II-VI Semiconductors The Hall Effect Measurement" (1977). Master's Theses (1922-2009) Access restricted to Marquette Campus. 2288.
https://epublications.marquette.edu/theses/2288