Date of Award
Spring 1971
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Physics
Abstract
The Wortman model of a semiconductor junction under anisotropic stress is applied to silicon controlled rectifiers using a two transistor equivalent circuit. Stress dependence is demonstrated by the model. A method of stress induced triggering is described and shown experimentally using a Motorola 2N2323, silicon controlled rectifier.
Recommended Citation
McLean, Michael B., "Anisotropic Stress Triggered Silicon Controlled Rectifiers" (1971). Master's Theses (1922-2009) Access restricted to Marquette Campus. 2615.
https://epublications.marquette.edu/theses/2615
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