Date of Award
Fall 1970
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical Engineering
First Advisor
Jaskolski, S. V.
Second Advisor
Ishii, T. K.
Third Advisor
Lade, Robert W.
Abstract
Several interesting phenomena have been observed when N-type zinc oxide single crystals were subjected to pressure along the C-axis or the B-axis. Since these phenomena had not been reported previously, a theory was developed to explain the observations. The theory based on the acoustoelectric interactions was not only able to explain all the observed pressure changes, but also brought to light some important factors concerning the electromechanical coupling constant.
Recommended Citation
Aggarwal, Deep, "Pressure Effects in Zinc Oxide Acoustoelectric Semiconductor Devices" (1970). Master's Theses (1922-2009) Access restricted to Marquette Campus. 3871.
https://epublications.marquette.edu/theses/3871