Date of Award
Fall 1987
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Advisor
Ishii, Thomas K.
Second Advisor
Jeutter, Dean C.
Third Advisor
Seitz, Martin A.
Abstract
The relationship between the power absorbed by a detector diode and the resulting detected voltage is investigated. Experimental data is obtained from a zero externally biased diode mounted in a rectangular waveguide system operating at 9.5 GHz. The Alpha Industries Inc. 4561, 6724 and 6725 Schottky diodes and the M/A-COM 1N23 Point Contact diode with 1 KO and 106 KQ loads are examined. This P-V relationship is analyzed using Time Domain, Harmonic Balance and Small Signal Analysis methods each of which uses a lumped parameter model of the microwave system and diode. This relationship is also characterized with a closed form equation. The Time Domain Signal Analysis method is selected over the others on the basis of how well it correlates with experimental data. In the worst case, for the 1N23 diode and 106 KQ load, the predicted P-V relation correlates within 5.0 dB at most for measured absorbed diode powers up to approximately 0.0 dBm. In the best case, for the 4561 diode and 1 KQ load, the predicted P-V relation correlates within 1.o dB at most for measured absorbed diode powers up to approximately 5.0 dBm.
Recommended Citation
Wolski, Mark R., "Signal Analysis and Characterization of Microwave Detector Diodes for Wide Dynamic Range Applications" (1987). Master's Theses (1922-2009) Access restricted to Marquette Campus. 4383.
https://epublications.marquette.edu/theses/4383