Date of Award
Spring 1974
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Advisor
Jaskolski, S. V.
Second Advisor
Ishii, T. K.
Third Advisor
Sedivy, J. K.
Abstract
Current saturation and oscillation have been observed in bulk effect devices made from high resistivity gallium arsenide. This research has investigated the use of alloyed indium contacts to reproducibly fabricate such devices. Field dependent trapping of carriers has been used to explain the presence of such effects.
Recommended Citation
Mack, Alan J., "Investigation of the Voltage-Current Characteristics of Bulk Effect Diodes Prepared from High Resistivity Gallium Arsenide" (1974). Master's Theses (1922-2009) Access restricted to Marquette Campus. 4773.
https://epublications.marquette.edu/theses/4773