Date of Award
Summer 1966
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Advisor
Hirthe, Walter M.
Second Advisor
Sedviy, J. R.
Third Advisor
Blumenthal, R. N.
Abstract
The theory of the mobility of electrons in semiconductors is discussed and the various expressions for the mobility due to different scattering mechanisms are presented. Te existing experimental data on the mobility of electrons in rutile is analyzed. Methods which can be used to determine the mobility in oxide semiconductors are discussed and some experimental data is then analyzed using these methods. For rutile in the temperature range of 1100-1300 degrees c, the mobility is shown to have a magnitude of 0.1 cm 2 /(volt-sec). The scattering mechanism cannot be deduced due to the uncertainty in the temperature variation which is determined. For "formula" in the temperature range of 100-300 degrees K , the mobility is shown to have a magnitude of 0.3 cm 2 /(volt-sec). A temperature dependence of T1.2 indicates that ionized impurity scattering is predominate in this temperature region.
Recommended Citation
Kirk, John C. Jr., "The Temperature Variation of the Mobility of Electrons in Rutile At Elevated Temperatures" (1966). Master's Theses (1922-2009) Access restricted to Marquette Campus. 4909.
https://epublications.marquette.edu/theses/4909