Date of Award
Fall 1989
Document Type
Thesis - Restricted
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Advisor
Ishii, Thomas
Second Advisor
Jeutter, Dean C.
Third Advisor
Mulligan, Michael
Abstract
The majority of' today's microwave detectors are based on microwave diodes. The research presented in this thesis develops the theory of a new, more sensitive detector based on a negatively biased microwave FET. The theory construction of was then applied to the design and a FET microwave detector. The design resulted in a detector that has an average tangential signal sensitivity of -58.5dBm at the design frequency and a dynamic range of 41.5dB. Finally the FET detector was compared to a diode microwave detector under resistive loads of "formula". When under the same load conditions and at the designed and at the designed frequency of 8.6GHz the FET detector surpassed the FET diode detector in sensitivity by a minimum of 3.5dB. The dynamic range of the FET detector was 6.9dB less than for the diode detector. However the dynamic range was still large, 41.5 dB
Recommended Citation
Luglio, Juan R., "Negatively Biased Field Effect Transistor Used As a Microwave Detector" (1989). Master's Theses (1922-2009) Access restricted to Marquette Campus. 5025.
https://epublications.marquette.edu/theses/5025