Date of Award
Spring 1982
Document Type
Dissertation - Restricted
Degree Name
Doctor of Philosophy (PhD)
Department
Electrical and Computer Engineering
First Advisor
Jaskolski, Stanley V.
Second Advisor
Schutten, Herman P.
Third Advisor
Ishii, Thomas K.
Abstract
A review of the electronic saturated carrier velocity effect is made followed by the application of this effect to the construction of a two terminal current limiting device based on this effect. Three different structures were constructed In various different dimensions and with differing doping levels. In all cases silicon material was used. A computer model of the device was developed which al lowed an accurate simulation of the device by proper solution of the space charge distribution and avalanche Ionization characteristics. The design of a current limiter ls shown to be limited by power density, space charge Injection, and Ionization effects, which are strongly Influenced by the structure and material chosen for construction of the current limiter.