Document Type

Article

Language

eng

Publication Date

3-29-2012

Publisher

AIP Publishing

Source Publication

AIP Advances

Source ISSN

2158-3226

Abstract

Measurements of a meta-atom integrated with a low noise amplifier into the split-ring resonator are presented. A comparison is made between baseline meta-atoms and one integrated with a GaAs low noise amplifier. S-parameter measurements in a RF strip-line show the resonant frequency location. The resonance null is more prominent for the integrated meta-atom. Biasing the low noise amplifier from 0 to 7 VDC showed that the resonant null improved with biasing voltage. As the biasing voltage increases, the transmission null reduced from -11.82 to -23.21 dB for biases from 0 to 7 VDC at resonant frequency.

Comments

Published version. AIP Advances, Vol. 2 (2012): 012196. DOI. This is a work of the U.S. Government and is not subject to copyright protection in the United States.

Ronald A. Coutu, Jr. was affiliated with the Department of Electrical and Computer Engineering, Air Force Institute of Technology, 2950 Hobson Way, Bldg 641, Wright-Patterson AFB Ohio at the time of publication.

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