Document Type
Article
Language
eng
Publication Date
2005
Publisher
Institute of Electrical and Electronic Engineers (IEEE)
Source Publication
Journal of Lightwave Technology
Source ISSN
0733-8724
Abstract
A generalized history-dependent recurrence theory for the time-response analysis is derived for avalanche photodiodes with multilayer, heterojunction multiplication regions. The heterojunction multiplication region considered consists of two layers: a high-bandgap Al/sub 0.6/Ga/sub 0.4/As energy-buildup layer, which serves to heat up the primary electrons, and a GaAs layer, which serves as the primary avalanching layer. The model is used to optimize the gain-bandwidth product (GBP) by appropriate selection of the width of the energy-buildup layer for a given width of the avalanching layer. The enhanced GBP is a direct consequence of the heating of primary electrons in the energy-buildup layer, which results in a reduced first dead space for the carriers that are injected into the avalanche-active GaAs layer. This effect is akin to the initial-energy effect previously shown to enhance the excess-noise factor characteristics in thin avalanche photodiodes (APDs). Calculations show that the GBP optimization is insensitive to the operational gain and the optimized APD also minimizes the excess-noise factor.
Recommended Citation
Kwon, Oh-Hyun; Hayat, Majeed M.; Campbell, Joe C.; Saleh, Bahaa E.A.; and Teich, Malvin Carl, "Gain-bandwidth product optimization of heterostructure avalanche photodiodes" (2005). Electrical and Computer Engineering Faculty Research and Publications. 536.
https://epublications.marquette.edu/electric_fac/536
Comments
Accepted version. Journal of Lightwave Technology, Vol. 23, No. 5 (2005): 1896-1906. DOI. © 2005 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Majeed M. Hayat was affiliated with the University of New Mexico, Albuquerque at the time of publication.