Document Type
Article
Language
eng
Publication Date
2-2018
Publisher
Institute of Electrical and Electronic Engineers (IEEE)
Source Publication
IEEE Transactions on Electron Devices
Source ISSN
0018-9383
Abstract
It has been known that McIntyre's local multiplication theory for avalanche photodiodes (APDs) does not fully explain the experimental results for single-carrier InAs APDs, which exhibit excess noise factor values below 2. While it has been established that the inclusion of the dead-space effect in the nonlocal multiplication theory resolves this discrepancy, no closed-form formulas for the mean gain and excess noise factor have been specialized to InAs APDs in a nonlocal setting. Upon utilizing prior analytical formulation of single-carrier avalanche multiplication based on age-dependent branching theory in conjunction with nonlocal ionization coefficients and thresholds for InAs, closed-form solutions of the mean gain and the excess noise factor for InAs APDs are provided here for the first time. The formulas are validated against published experimental data from InAs APDs across a variety of multiplication region widths and are shown to be applicable for devices with multiplication widths of 500 nm and larger.
Recommended Citation
Jamil, Erum; Hayat, Majeed M.; and Keeler, Gordon A., "Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes" (2018). Electrical and Computer Engineering Faculty Research and Publications. 551.
https://epublications.marquette.edu/electric_fac/551
ADA Accessible Version
Comments
Accepted version. IEEE Transactions on Electron Devices, Vol. 65, No. 2 (February 2018): 610-614. DOI. © 2018 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.
Majeed M Hayat was affiliated with University of New Mexico, Albuquerque at the time of publication.