Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes

Authors

Jun Huang, University of Illinois - Chicago
Koushik Banerjee, Intel Corporation
Siddhartha Ghosh, University of Illinois - Chicago
Majeed M. Hayat, Marquette UniversityFollow

Document Type

Article

Language

eng

Publication Date

7-2013

Publisher

Institute of Electrical and Electronic Engineers (IEEE)

Source Publication

IEEE Transactions on Electron Devices

Source ISSN

0018-9383

Abstract

In this paper, novel avalanche photodiode structures with alternate carrier multiplication nanometer regions, placed next to a wider electron multiplication region, to create dual-carrier feedback systems, are proposed. Gain and excess noise factor of these structures are calculated based on the dead space multiplication theory under uniform electric field. In addition, the equivalent impact ionization ratios are derived and compared. It is observed that the proposed structures can generate much higher gain compared with conventional pure electron multiplication structures under the same electric field without severely degrading the excess noise quality. Excess noise is further optimized with careful adjustment of thin multiplication regions' thicknesses. These high-gain structures can operate under low-bias (<; 5 V) conditions, making it possible to integrate infrared avalanche photodiodes (APDs) directly into silicon read-out circuits. In this paper, type-II mid-wavelength infrared InAs/GaSb strained layer superlattice is used for simulation. However, the concept of dual-carrier APDs, with carrier feedback to generate high gain and control of excess noise through confining impact ionization in thin layers, is general and can also be applied to other wavelength APDs with different materials and thicknesses. Type II InAs/GaSb strain layer superlattice allows for versatile band structure design leading to impact ionization coefficient engineering.

Comments

Accepted version. IEEE Transactions on Electron Devices, Vol. 60, No. 7 (July 2013): 2296-2301. DOI. © 2013 Institute of Electrical and Electronic Engineers (IEEE). Used with permission.

Majeed M. Hayat was affiliated with the University of New Mexico, Albuquerque at the time of publication.

Recommended Citation

Huang, Jun; Banerjee, Koushik; Ghosh, Siddhartha; and Hayat, Majeed M., "Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes" (2013). Electrical and Computer Engineering Faculty Research and Publications. 566.
https://epublications.marquette.edu/electric_fac/566