Selection and Control of Individual Domain Walls in Nanowire Arrays via Asymmetric Depinning Fields

Authors

Andrew Kunz, Marquette UniversityFollow
H. Henry Le, Marquette University
Demetrious Kutzke, Marquette University
Jesse Vogeler-Wunsch, Marquette University

Document Type

Article

Language

eng

Publication Date

2-2016

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Source Publication

IEEE Transactions on Magnetics

Source ISSN

0018-9464

Abstract

Artificially inscribed notches are often used to pin domain walls (DWs) in ferromagnetic nanowires. The process of selecting and moving the trapped DW in nanowire arrays is an important step for potential applications. The chirality of a DW leads to a pair of pinning positions at the inscribed notches, which can be modeled by a symmetric double well. The depinning field depends on the side of the well, the DW is trapped with respect to the applied field direction, and the DWs can also be transitioned between the two wells without depinning. We demonstrate how manipulating the double well improves the DW selectivity and control in wire arrays containing multiple DWs.

Comments

Accepted version. IEEE Transactions on Magnetics, Vol. 52, No. 2 (February 2016). DOI. © 2016 IEEE. Used with permission.

Recommended Citation

Kunz, Andrew; Le, H. Henry; Kutzke, Demetrious; and Vogeler-Wunsch, Jesse, "Selection and Control of Individual Domain Walls in Nanowire Arrays via Asymmetric Depinning Fields" (2016). Physics Faculty Research and Publications. 125.
https://epublications.marquette.edu/physics_fac/125