Dependence of Domain Wall Structure for Low Field Injection into Magnetic Nanowires

Authors

Andrew Kunz, Marquette UniversityFollow
Sarah C. Reiff, Marquette University

Document Type

Article

Language

eng

Publication Date

2009

Publisher

American Institute of Physics

Source Publication

Applied Physics Letters

Source ISSN

0003-6951

Abstract

Micromagnetic simulation is used to model the injection of a domain wall into a magnetic nanowire with field strengths less than the so-called Walker field. This ensures fast, reliable motion of the wall. When the wire is located at the edge of a small injecting disk, a bias field used to control the orientation of the domain wall can reduce the pinning potential of the structure. The low field injection is explained by a simple model, which relies on the topological nature of a domain wall. The technique can quickly inject multiple domain walls with a known magnetic structure.

Comments

Published version. Applied Physics Letters, Vol. 94, No. 19 (2009). DOI. © 2009 American Institute of Physics. Used with permission.

Recommended Citation

Kunz, Andrew and Reiff, Sarah C., "Dependence of Domain Wall Structure for Low Field Injection into Magnetic Nanowires" (2009). Physics Faculty Research and Publications. 126.
https://epublications.marquette.edu/physics_fac/126