Document Type
Article
Publication Date
6-2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Source Publication
IEEE Transactions on Magnetics
Source ISSN
0018-9464
Original Item ID
DOI: 10.1109/TMAG.2010.2041044
Abstract
Artificial defects such as notches and antinotches are often attached to magnetic nanowires to serve as trapping (pinning) sites for domain walls. The magnetic field necessary to release (depin) the trapped domain wall from the notch depends on the type, geometric shape, and dimensions of the defect but is typically quite large. Conversely we show here that for some notches and antinotches there exists a much smaller driving field for which a moving domain wall will travel past the defect without becoming trapped. This dynamic pinning field also depends on the type, geometric shape and defect dimensions. Micromagnetic simulation is used to investigate both the static and dynamic pinning fields and their relation to the topologic structure of the domain wall.
Recommended Citation
Kunz, Andrew and Priem, Jonathan D., "Dynamic Notch Pinning Fields for Domain Walls in Ferromagnetic Nanowires" (2010). Physics Faculty Research and Publications. 2.
https://epublications.marquette.edu/physics_fac/2
Comments
Published version. IEEE Transactions on Magnetics, Vol. 46, No. 6 (June 2010): 1559-1561. DOI. © 2010 Institute of Electrical and Electronics Engineers. Used with permission.